solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - power.com designer?s data sheet to - 254 and to - 254z note 1: drain current is package limited sf f 3 5 n2 0 m sf f 3 5 n2 0 z 5 5 amp (note 1) / 2 0 0 volts 3 5 mo n - channel trench gate mosfet features: trench gate technology lowest on - resistance in the industry uis rated hermetically sealed, isolated power package low total gate charge fast switching tx, txv, s - level screening available improved (r ds(on) q g ) figure of merit enhanced replacement for irhm250 types maximum ratings symbol value units drain - source voltage v dss 2 0 0 v gate ? source voltage v gs 20 v max. continuous drain current ( junction temperature limited) @ t c = 25oc @ t c = 125oc i d 1 i d 2 8 5 1 2 a max. continuous drain current ( package limited) @ t c = 25oc i d 3 55 a max. avalanche current @ l= 0.1 mh i ar 3 5 a repetitive avalanche energy @ l= 0.1 mh e ar 6 0 mj total power dissipation @ t c = 25oc p d 2 1 0 w operating & storage tempera ture t op & t stg - 55 to + 175 oc maximum thermal resistance (junction to case) r 0 jc 0 .7 (typ 0.55) oc/w note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to re lease. data sheet #: ft001 8 a doc pin 3 pin 2 pin 1 pin 1 pin 3 pin 2 to - 254 z ( z) to - 25 4 (m)
solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - power.com sf rc 3 5 n2 0m sfrc 3 5 n2 0 z electrical ch aracteristics 4 / symbol min typ max units drain to source breakdown voltage v gs = 0 v , i d = 250a bv dss 2 0 0 ?? ?? v drain to source on state resistance v gs = 1 0 v , i d = 30 a, tj = 25 o c v gs = 1 0 v , i d = 3 0a, tj = 1 25 o c v gs = 1 0 v , i d = 30 a, tj = 1 7 5 o c r ds(o n) ?? ?? ?? 2 6 5 1 67 3 5 .0 ?? ?? mo gate threshold voltage v ds = v g s , i d = 250a v gs(th) 2 .0 ?? 4 .0 v gate to source leakage v gs = 20v i gss ?? ?? 100 na zero gate voltage drain current v ds = 200v , v gs = 0v, t j = 25 o c v ds = 20 0v , v gs = 0v, t j = 1 25 o c v ds = 20 0v , v gs = 0v, t j = 1 7 5 o c i dss ?? ?? ?? ?? ?? ?? 1 5 0 250 a a a forward transconductance v ds = 1 0 v , i d = 30 a, t j = 25 o c g fs 23 ?? ?? mho total gate charge gate to source charge gate to drain charge v gs = 1 0v v d s = 100 v i d = 6 5 a q g q gs q gd ?? ?? ?? 9 0 2 5 35 135 ?? ?? nc turn on delay time rise time turn off delay time fall time v gs = 1 0v v d s = 10 0v i d = 6 5 a r g = 2.5 o min t d ( on ) t r t d ( off ) t f ?? ?? ?? ?? 2 5 225 5 0 20 0 40 340 75 300 nsec diode forward voltage i f = 6 5 a, v gs = 0 v v sd ?? 1 .0 1 . 5 0 v diode reverse recovery time peak reverse recovery current reverse recovery charge i f = 50 a, di/dt = 100a/usec t rr i rm(rec) q rr ?? ?? ?? 14 0 8 0.55 220 12.5 1.3 nsec a c input capacitance output capacitance reverse transfer capacitan ce v gs = 0v v d s = 2 5 v f = 1 mhz c iss c oss c rss ?? ?? ?? 51 00 48 0 21 0 ?? ?? ?? pf notes: * pulse test: pulse width = 300sec, duty cycle = 2% . 1 / for ordering information, price, and availability contact factory. 2 / screening per mil - prf - 19500 . 3 / for pac kage outlines / lead bending options / pinout configurations contact factory. 4 / unless otherwise specified, all electrical characteristics @25 o c. available part numbers: consult factory pin assignment (standard) package drain source gate to - 2 5 4 (m) pin 1 pin 2 pin 3 to - 25 4z (z) pin 1 pin 2 pin 3 note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: ft001 8 a doc
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